Refractive index and electro‐optic effect in compressive and tensile strained quantum wells
نویسندگان
چکیده
منابع مشابه
Tensile-strained growth on low-index GaAs
We present a comparative study of the growth of tensile-strained GaP on the four low-index surfaces of GaAs: (001), (110), (111)A, and (111)B. For each surface orientation we outline the growth conditions required for smooth GaAs homoepitaxy. We are able to predict the resulting surface morphology when GaP is deposited onto these four GaAs surfaces by considering the influence of surface orient...
متن کاملRoom Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge wells, electroluminescence from Γ1-HH1 transition in 12-nm Ge wells was observed at around 1550 nm. A...
متن کاملModeling and Simulation of Strained Quantum Wells in Semiconductor Lasers
Amodel allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the ...
متن کاملTerahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells
Spin-split heavy-hole gases in strained germaniumquantumwells were characterized by polarisationresolved terahertz time-domain spectroscopy. Effectivemasses, carrier densities, g-factors, transport lifetimes,mobilities andRashba spin-splitting energies were evaluated, giving quantitative insights into the influence of strain. The Rashba coefficient was found to lower for samples with higher bia...
متن کاملVery low saturation densities in strained InGaAdAIGaAs multiple quantum wells
The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% ‘and 15%. Very low saturation densities, as low as 0.82X 1017 cmm3...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1991
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.348418